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WeChatSingle-layer, multi-layer and superlattice chalcogenides for non-volatile memory and artificial intelligence device
- Volume
- CitationMiuchi M, Yin Y. Single-layer, multi-layer and superlattice chalcogenides for non-volatile memory and artificial intelligence device. Electron. Signal Process. 2025(1):0004, https://doi.org/10.55092/esp20250004.
- DOI10.55092/esp20250004
- CopyrightCopyright2025 by the authors. Published by ELSP.
- Special Issue
Abstract
Chalcogenide materials such as GeTe, Sb2Te3, Ge2Sb2Te5, compounds of sulfur, selenium, and tellurium, are characterized by a rapid and reversible phase transition. They have emerged as versatile candidates for advanced electronic and computing applications due to their unique optical and electrical properties. The potential of single-layer, multi-layer, and superlattice chalcogenides as the active materials in non-volatile memory (NVM) and artificial intelligence (AI) devices is shown in this review. Single-layer chalcogenides often offer exceptional scalability, fast speed, and nonvolatility, enabling them usable for NVM and synaptic devices. Multi-layer chalcogenides with stacked structures exhibit unique properties different from single-layer chalcogenides, allowing high performance such as low power and multilevel storage. Superlattice chalcogenides with alternating chalcogenide layers enable ultra-low power consumption of devices, in which only few of atom moves for the operation of devices. This review also gives some related research details. A comprehensive understanding of these studies provides insights into the design and application of chalcogenide-based devices, offering pathways for future research and innovation in memory and AI hardware.
Keywords
chalcogenide; phase change; non-volatile memory; artificial intelligence
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